Title:
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2016/006663
Kind Code:
A1
Abstract:
Provided are a semiconductor substrate production method and the like that make it possible to improve the electrical characteristics of a semiconductor substrate provided with first and second semiconductor layers that are in contact with each other. The semiconductor substrate production method is provided with: an irradiation step in which a first impurity on the surface of a first semiconductor layer is irradiated in a vacuum and a first impurity on the surface of a second semiconductor layer is irradiated in a vacuum; a bonding step in which the surface of the first semiconductor layer and the surface of the second semiconductor layer are bonded in the vacuum in which the irradiation step was performed and a semiconductor substrate having a bonded interface is produced; and a heat treatment step in which the semiconductor substrate that was produced in the bonding step is subjected to heat treatment. The first impurity is an inactive impurity that does not cause a carrier to be generated in the first semiconductor layer or the second semiconductor layer. The heat treatment is performed such that the width of the depth-direction concentration profile of the first impurity included in the first semiconductor layer and the second semiconductor layer is narrower after the heat treatment than before the heat treatment.
Inventors:
IMAOKA KO (JP)
KOBAYASHI MOTOKI (JP)
UCHIDA HIDETSUGU (JP)
YAGI KUNIAKI (JP)
KAWAHARA TAKAMITSU (JP)
HATTA NAOKI (JP)
MINAMI AKIYUKI (JP)
SAKATA TOYOKAZU (JP)
MAKINO TOMOATSU (JP)
KATO MITSUHARU (JP)
KOBAYASHI MOTOKI (JP)
UCHIDA HIDETSUGU (JP)
YAGI KUNIAKI (JP)
KAWAHARA TAKAMITSU (JP)
HATTA NAOKI (JP)
MINAMI AKIYUKI (JP)
SAKATA TOYOKAZU (JP)
MAKINO TOMOATSU (JP)
KATO MITSUHARU (JP)
Application Number:
PCT/JP2015/069792
Publication Date:
January 14, 2016
Filing Date:
July 09, 2015
Export Citation:
Assignee:
TOYOTA JIDOSHOKKI KK (JP)
SICOXS CORP (JP)
SICOXS CORP (JP)
International Classes:
H01L21/02; H01L21/265; H01L21/336; H01L29/78
Domestic Patent References:
| WO2014024611A1 | 2014-02-13 |
Foreign References:
| JP2011246761A | 2011-12-08 | |||
| JP2010080834A | 2010-04-08 | |||
| JPH1092702A | 1998-04-10 | |||
| JP2003249426A | 2003-09-05 |
Other References:
See also references of EP 3168862A4
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
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