Title:
SEMICONDUCTOR SUBSTRATE FOR SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING DEVICE, AND METHOD FOR MANUFACTURING THEM
Document Type and Number:
WIPO Patent Application WO/2008/029918
Kind Code:
A1
Abstract:
This invention provides a semiconductor substrate for a solid state imaging device, which, as compared with a gettering method using carbon ion implantation, can realize a lower production cost and can eliminate problems involved in a device process, for example, the occurrence of particles. A solid-solution carbon having a concentration of 1 x 1016 to 1 x 1017 atoms/cm3 and a solid-solution oxygen having a concentration of 1.4 x 1018 to 1.6 x 1018 atoms/cm3 are contained in a silicon substrate.
Inventors:
KURITA, Kazunari (2-1 Shibaura 1-chome, Minato-k, Tokyo 34, 1058634, JP)
Application Number:
JP2007/067518
Publication Date:
March 13, 2008
Filing Date:
September 07, 2007
Export Citation:
Assignee:
SUMCO CORPORATION (2-1 Shibaura 1-chome, Minato-ku Tokyo, 34, 1058634, JP)
株式会社ＳＵＭＣＯ (〒34 東京都港区芝浦一丁目２番１号 Tokyo, 1058634, JP)
株式会社ＳＵＭＣＯ (〒34 東京都港区芝浦一丁目２番１号 Tokyo, 1058634, JP)
International Classes:
H01L27/146; H01L21/322; H01L31/10
Attorney, Agent or Firm:
SUGIMURA, Kenji et al. (36F Kasumigaseki Common Gate West, 3-2-1 Kasumigasek, Chiyoda-ku Tokyo 13, 1000013, JP)
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