SEMICONDUCTOR SURFACE LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREOF

WIPO Patent Application WO/2012/014604

A1

A semiconductor surface light-emitting element is provided with: a photonic crystal layer (6) that is constituted by having a plurality of holes (H) formed periodically on a basic layer (6A) that is composed of a first compound semiconductor having a zincblende structure, and making an embedding layer (6B) having a zincblende structure and that is composed of a second compound semiconductor grow within the holes (H); and an active layer (4) that supplies light to the photonic crystal layer (6). The main surface of the basic layer (6A) is a (001) face, and the side face of the holes (H) has at least three different {100} faces.

JP5154819	Substrate and its manufacturing method
WO/2011/027679	SEMICONDUCTOR LIGHT EMITTING ELEMENT
JP5683994	Semiconductor light emitting device, light emitting module and lighting device having a multi-series array

HIROSE KAZUYOSHI (JP)
FURUTA SHINICHI (JP)
WATANABE AKIYOSHI (JP)
SUGIYAMA TAKAHIRO (JP)
SHIBATA KOUSUKE (JP)
KUROSAKA YOSHITAKA (JP)
NODA SUSUMU (JP)

PCT/JP2011/064181

February 02, 2012

June 21, 2011

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HAMAMATSU PHOTONICS KK (JP)
UNIV KYOTO (JP)
HIROSE KAZUYOSHI (JP)
FURUTA SHINICHI (JP)
WATANABE AKIYOSHI (JP)
SUGIYAMA TAKAHIRO (JP)
SHIBATA KOUSUKE (JP)
KUROSAKA YOSHITAKA (JP)
NODA SUSUMU (JP)

H01L33/22; H01S5/185

JP2006156944A	2006-06-15
JP2008506269A	2008-02-28
JP2006258865A	2006-09-28

HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)

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