Title:
SEMICONDUCTOR SURFACE STATE CARRIER LIFETIME TESTING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/004430
Kind Code:
A1
Abstract:
A semiconductor surface state carrier lifetime testing method comprises the following steps: 1) transmitting light pulses by using a narrow pulse source having a photon energy level greater than a semiconductor band gap, and coupling, by means of optical path collimation, the pulses to a near-field optical probe, the near-field optical probe exciting and generating photon-generated carriers on a surface of a semiconductor material under test; 2) the excited photon-generated carriers concentrating on the surface of the semiconductor material, and continuously recombining using surface states as recombination centers, a recombination rate being directly proportional to a carrier concentration and a carrier lifetime; 3) during the carrier excitation and recombination processes of step 1) and step 2), an electron volume effect causing a change in a lattice constant and generating a stress wave, and detecting a signal of the stress wave by means of high-frequency broadband ultrasonic detection; and 4) performing fitting computation on the signal of the stress wave, and obtaining a surface state carrier lifetime τc. The semiconductor surface state carrier lifetime testing method excludes influences of bulk recombination of a semiconductor, and has advantages of measurement accuracy and the like.
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Inventors:
CHENG QIAN (CN)
XIE WEIYA (CN)
GAO YA (CN)
CHEN YIMING (CN)
CHEN YINGNA (CN)
ZHANG MENGJIAO (CN)
ZHANG HAONAN (CN)
WU SHIYING (CN)
XIE WEIYA (CN)
GAO YA (CN)
CHEN YIMING (CN)
CHEN YINGNA (CN)
ZHANG MENGJIAO (CN)
ZHANG HAONAN (CN)
WU SHIYING (CN)
Application Number:
PCT/CN2020/100429
Publication Date:
January 14, 2021
Filing Date:
July 06, 2020
Export Citation:
Assignee:
UNIV TONGJI (CN)
International Classes:
G01R31/26
Foreign References:
| CN110470965A | 2019-11-19 | |||
| CN104094389A | 2014-10-08 | |||
| CN104819938A | 2015-08-05 | |||
| CN108983063A | 2018-12-11 | |||
| CN101975815A | 2011-02-16 | |||
| CN102621465A | 2012-08-01 | |||
| CN104359737A | 2015-02-18 | |||
| CN106680687A | 2017-05-17 | |||
| JP2011082312A | 2011-04-21 |
Other References:
See also references of EP 3839529A4
Attorney, Agent or Firm:
SHANGHAI KESHENG INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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