Title:
SEMICONDUCTOR TEST SAMPLE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/279442
Kind Code:
A1
Abstract:
A semiconductor test sample and a preparation method therefor, which are used for solving the problem of a metal conductor having an adverse effect on the imaging contrast of an ion injection region in imaging technologies such as SSRM, thereby improving the image scanning quality of the SSRM. The preparation method comprises the following steps: providing a product to be analyzed, wherein the product comprises a conductive interconnection layer and a semiconductor doping region, which is located below the conductive interconnection layer; selectively removing a conductive material from the conductive interconnection layer, replacing the conductive material with a non-conductive material, and replacing the conductive interconnection layer with an insulating sacrificial layer; and taking, as a test sample, a product which contains both the insulating sacrificial layer and the semiconductor doping region.
Inventors:
DING RUI (CN)
Application Number:
PCT/CN2021/107826
Publication Date:
January 12, 2023
Filing Date:
July 22, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/66
Foreign References:
| CN113484113A | 2021-10-08 | |||
| CN104241156A | 2014-12-24 | |||
| US20150111316A1 | 2015-04-23 | |||
| US20080006786A1 | 2008-01-10 | |||
| CN101419400A | 2009-04-29 | |||
| CN102374942A | 2012-03-14 | |||
| CN208738231U | 2019-04-12 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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