Title:
SEMICONDUCTOR ULTRAVIOLET RAY-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2013/137658
Kind Code:
A1
Abstract:
According to one aspect of the present disclosure of a semiconductor ultraviolet ray-emitting diode, the semiconductor ultraviolet ray-emitting diode comprises: a metal reflective film, which electrically comes into contact with a second semiconductor layer from the opposite side of a first semiconductor layer, with an active layer at the center, for reflecting light which is generated form the active layer toward the first semiconductor layer, and which comprises Al as a light reflecting material; and a structure containing oxygen, which is positioned between the second semiconductor layer and the metal reflective film and is provided with a light-transmitting conductive oxide film having a thickness of less than or equal to 5nm.
Inventors:
AN SANG JEONG (KR)
Application Number:
PCT/KR2013/002051
Publication Date:
September 19, 2013
Filing Date:
March 14, 2013
Export Citation:
Assignee:
AN SANG JEONG (KR)
International Classes:
H01L33/46; H01L33/42
Foreign References:
| KR20090121812A | 2009-11-26 | |||
| KR20120000974A | 2012-01-04 | |||
| JP2007265708A | 2007-10-11 | |||
| JP2006140234A | 2006-06-01 |
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