Title:
SEMICONDUCTOR WAFER COMPRISING SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SIC SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/017601
Kind Code:
A1
Abstract:
A semiconductor wafer comprises an epitaxial layer (10b) made from silicon carbide and provided on the surface of a silicon carbide wafer (10a). In the semiconductor wafer, such a requirement that the waviness value expressed by the formula: |α| + |β| is 1 μm or less is satisfied, wherein α and β represent the height of a highest point and the height of a lowest point, respectively, in a light-exposed area relative to a surface reference plane, wherein the surface reference plane is determined by measuring the heights of multiple points in the epitaxial layer in an evaluation area, i.e., an area to be evaluated, using a surface shape measurement device that can evaluate the flatness of the surface of the epitaxial layer and then performing a calculation by the method of least squares on the basis of the measured heights, and the light-exposed area has the same center position as that of the evaluation area and lies in a different area from the evaluation area.
Inventors:
TAKEI SHINYA (JP)
MITANI SHUHEI (JP)
ICHIKAWA HARUHITO (JP)
TAKAHASHI IPPEI (JP)
WAKASUGI YUKIHIRO (JP)
MITANI SHUHEI (JP)
ICHIKAWA HARUHITO (JP)
TAKAHASHI IPPEI (JP)
WAKASUGI YUKIHIRO (JP)
Application Number:
PCT/JP2019/028317
Publication Date:
January 23, 2020
Filing Date:
July 18, 2019
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
C30B29/36; G03F7/20; H01L21/66; H01L29/12; H01L29/78
Foreign References:
| JP2016501809A | 2016-01-21 | |||
| JP2016052991A | 2016-04-14 | |||
| JP2016210680A | 2016-12-15 | |||
| JP2009292705A | 2009-12-17 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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