Title:
SEMICONDUCTOR WAFER MANUFACTURING METHOD AND SEMICONDUCTOR WAFER CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/049435
Kind Code:
A1
Abstract:
A semiconductor wafer manufacturing method is provided with at least a slicing
step for cutting out a thin-board-like wafer from a semiconductor ingot, a planarizing
step for planarizing the wafer, an etching step for removing process distortion
from the wafer, and a polishing step for polishing the wafer. The semiconductor
wafer manufacturing method and a semiconductor wafer cleaning method are characterized
in that the wafer is cleaned with a cleaning solution containing oxygenated water,
citric acid and sodium hydroxide, after the polishing step. Thus, metal impurities
adhered on the wafer after the polishing step can be efficiently removed.
Inventors:
IKEUCHI YOUJI (JP)
SAKAI TAKEME (JP)
SAKAI TAKEME (JP)
Application Number:
PCT/JP2006/319840
Publication Date:
May 03, 2007
Filing Date:
October 04, 2006
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
IKEUCHI YOUJI (JP)
SAKAI TAKEME (JP)
IKEUCHI YOUJI (JP)
SAKAI TAKEME (JP)
International Classes:
H01L21/304
Foreign References:
| JP2000012494A | 2000-01-14 | |||
| JP2004235619A | 2004-08-19 | |||
| JPH08213356A | 1996-08-20 | |||
| JP2002329691A | 2002-11-15 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa 2-chom, Taito-ku Tokyo 41, JP)
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