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Patent Searching and Data


Title:
SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2019/151441
Kind Code:
A1
Abstract:
One embodiment of the present invention provides a semiconductor wafer 1 that is provided with: a substrate 10 which is mainly composed of Si; a buffer layer 11 which is formed on the substrate 10 and is configured from a nitride semiconductor, while comprising an AlN layer 11a as the lowermost layer; and a nitride semiconductor layer 12 which is formed on the buffer layer 11 and contains Ga. The electrical resistivity of the substrate 10 is within the range of from 5 × 10-4 Ωcm (inclusive) to 100 Ωcm (inclusive); and the thickness of the buffer layer 11 is within the range of from 1,800 nm (inclusive) to 4,400 nm (exclusive).

Inventors:
YAMAMOTO TAIKI (JP)
IKEJIRI KEITARO (JP)
Application Number:
JP2019/003486
Publication Date:
August 08, 2019
Filing Date:
January 31, 2019
Export Citation:
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Assignee:
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L21/20; C23C16/34; H01L21/205; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
WO2010070863A12010-06-24
Foreign References:
JP2010153817A2010-07-08
JP2006100501A2006-04-13
JP2014022698A2014-02-03
JP2009007205A2009-01-15
JP2018093170A2018-06-14
Attorney, Agent or Firm:
HIRATA & PARTNERS (JP)
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