Title:
SEMICONDUCTOR WAFER THICKNESS MEASUREMENT METHOD AND SEMICONDUCTOR WAFER THICKNESS MEASUREMENT SYSTEM
Document Type and Number:
WIPO Patent Application WO/2020/261860
Kind Code:
A1
Abstract:
Provided is a semiconductor wafer thickness measurement method that makes it possible to use spectral interference to quickly measure the thickness of a semiconductor wafer at a plurality of points on a surface while suppressing thickness measurement value dispersion resulting from temperature dispersion on the surface. In this invention, when spectral interference is used to measure the thickness of a semiconductor wafer at a plurality of points on a surface: information regarding the influence of the semiconductor wafer temperature on the measured semiconductor wafer thickness value is determined beforehand, the temperatures of the semiconductor wafer at each measurement position are measured, and the information and the measured temperatures of the semiconductor wafer are used to correct the measured semiconductor wafer thickness values for each measurement position.
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Inventors:
MIYAZAKI YUJI (JP)
KIHARA TAKAYUKI (JP)
TAKANASHI KEIICHI (JP)
KIHARA TAKAYUKI (JP)
TAKANASHI KEIICHI (JP)
Application Number:
PCT/JP2020/021009
Publication Date:
December 30, 2020
Filing Date:
May 27, 2020
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
G01B11/06; H01L21/66
Foreign References:
| JP2016209951A | 2016-12-15 | |||
| JP2002277217A | 2002-09-25 | |||
| JPH01291107A | 1989-11-22 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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