Title:
SEMICONDUCTOR WAFER THINNING METHOD, AND THIN SEMICONDUCTOR WAFER
Document Type and Number:
WIPO Patent Application WO/2001/088970
Kind Code:
A1
Abstract:
A method for thinning a semiconductor wafer having a semiconductor element (2) on its surface, by polishing the back thereof. This method comprises bonding the surface of the semiconductor wafer (1) to a support (4) through an adhesive layer; polishing the back of the semiconductor wafer while holding the support; and separating the thinned semiconductor wafer from the support. Preferably, a semiconductor wafer is employed as the support, and a thermally separable double-coated sheet is employed as the adhesive layer. The semiconductor wafer is heated and separated after ground. As a result, the semiconductor wafer having a thickness of 120 µm or less can be manufactured at a low cost while suppressing the cracking or chipping to a minimum at the working step. Thus, there is provided a semiconductor wafer which is made thinner than those of the prior art while having a diameter as large as 150 mm or more.
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Inventors:
OKADA MAMORU (JP)
NAKAJIMA YUKIO (JP)
NAKAJIMA YUKIO (JP)
Application Number:
PCT/JP2001/003947
Publication Date:
November 22, 2001
Filing Date:
May 11, 2001
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
OKADA MAMORU (JP)
NAKAJIMA YUKIO (JP)
OKADA MAMORU (JP)
NAKAJIMA YUKIO (JP)
International Classes:
B24B7/22; B24B37/30; H01L21/304; H01L21/687; (IPC1-7): H01L21/304
Domestic Patent References:
| WO1999025019A1 | 1999-05-20 |
Foreign References:
| JPH11297650A | 1999-10-29 | |||
| JPH09148283A | 1997-06-06 | |||
| EP0967634A1 | 1999-12-29 | |||
| EP0951056A2 | 1999-10-20 |
Attorney, Agent or Firm:
Yoshimiya, Mikio (Motoasakusa 2-chome Taito-ku, Tokyo, JP)
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