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Title:
SEMICONDUCTOR WHITE LIGHT SOURCE
Document Type and Number:
WIPO Patent Application WO/2004/038815
Kind Code:
A1
Abstract:
The inventive semiconductor white light source comprises a semiconductor radiating crystal (1) which is based on a multicomponent Al-In-Ga-N system and generates the light in the blue-violet spectral range, and a coating containing a phosphor (5) which absorbs a part of light emitted by the crystal and gives off light in the yellow spectral range. An oxonitride $g(a)-sialon material activated with a divalent europium is used in the form of a phosphor.

Inventors:
ITKINSON GRIGORY VLADIMIROVICH (RU)
ZAKGEIM ALEKSANDR LVOVICH (RU)
VASILIEVA ELENA DMITRIEVNA (RU)
CHERNOVETS BORIS VASILIEVICH (RU)
GREKOV FEDOR FEDOROVICH (RU)
BOGDANOV ALEKSANDR ALEKSANDROV (RU)
Application Number:
PCT/RU2003/000472
Publication Date:
May 06, 2004
Filing Date:
October 23, 2003
Export Citation:
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Assignee:
SVETLANA OPTOELEKTRONIKA (RU)
ITKINSON GRIGORY VLADIMIROVICH (RU)
ZAKGEIM ALEKSANDR LVOVICH (RU)
VASILIEVA ELENA DMITRIEVNA (RU)
CHERNOVETS BORIS VASILIEVICH (RU)
GREKOV FEDOR FEDOROVICH (RU)
BOGDANOV ALEKSANDR ALEKSANDROV (RU)
International Classes:
C09K11/08; C09K11/77; H01L33/26; H05B33/14; H05B33/20; H01L33/50; (IPC1-7): H01L33/00
Domestic Patent References:
WO2001050500A22001-07-12
Foreign References:
US5998925A1999-12-07
RU2170995C12001-07-20
GB2373368A2002-09-18
US5998925A1999-12-07
Other References:
KREVEL VAN J W H ET AL.: "Luminescence Properties of Terbium-, Cerium-, Or Europhium-doped Alpha-Sialon Materials", JOURNAL OF SOLID STATE CHEMISTRY, vol. 165, no. 1, 1 April 2002 (2002-04-01), pages 19 - 24
R. A. ANDRIYEWSKIY; I. I. SPIVAK: "Siliziumnitrid und die Materialien auf seiner Grundlage", 1984, M: VERLAG METALLURGIE, pages: 5 - 15
Attorney, Agent or Firm:
Stepanova, Nina Ivanovna (St.Petersburg, 3, RU)
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