SENSING AMPLIFICATION CIRCUIT AND DATA READOUT METHOD

WIPO Patent Application WO/2023/093095

A1

The present disclosure relates to a sensing amplification circuit and a data readout method. The sensing amplification circuit comprises a first P-type transistor, which is connected to a first signal end; a second P-type transistor, which is connected to a second signal end; a first N-type transistor, which is connected to a third signal end; a second N-type transistor, which is connected to a fourth signal end; a first offset cancellation unit, which is configured to connect a first readout bit line to a second complementary readout bit line in response to a first offset cancellation signal; a second offset cancellation unit, which is configured to connect a first complementary readout bit line to a second readout bit line in response to a second offset cancellation signal; a first write-back unit, which is configured to connect the first complementary readout bit line to the second complementary readout bit line in response to a first write-back signal; and a second write-back unit, which is configured to connect the first readout bit line to the second readout bit line in response to a second write-back signal. The present disclosure can effectively reduce energy consumption caused by offset cancellation.

YANG GUIFEN (CN)
CHI SUNGSOO (CN)

PCT/CN2022/107640

June 01, 2023

July 25, 2022

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CHANGXIN MEMORY TECH INC (CN)

G11C7/06; G11C7/08; G11C11/4091

CN112767975A	2021-05-07
CN104575569A	2015-04-29
CN112863561A	2021-05-28
US20200075065A1	2020-03-05
US20190147925A1	2019-05-16

ADVANCE CHINA IP LAW OFFICE (CN)

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