SENSOR DEVICE WITH REDUCED PARASITIC-INDUCED ERROR

Title:

SENSOR DEVICE WITH REDUCED PARASITIC-INDUCED ERROR

Document Type and Number:

WIPO Patent Application WO/2010/117615

Kind Code:

A3

Abstract:

A device (110) includes a sensing element (26) having drive nodes (34, 36) and sense nodes (42, 44). Parasitic capacitance (22) is present between drive node (34) and sense node (42). Likewise, parasitic capacitance (24) is present between drive node (36) and sense node (44). When a drive signal (56) is applied between drive nodes (34, 36), a parasitic current (70) between drive and sense nodes (34, 42) and a parasitic current (72) between drive and sense nodes (36,44) is created due to the parasitic capacitances (22, 24). A capacitive network (112) is coupled between the drive node (36) and the sense node (42) to create a correction current (134) through capacitive network (112) that cancels parasitic current (70). Likewise, a capacitive network (114) is coupled between the drive node (34) and the sense node (44) to create a correction current (138) through capacitive network (112) that cancels parasitic current (72).

Inventors:

BIEN DAVID E (US)
MIJUSKOVIC DEJAN (US)

Application Number:

PCT/US2010/028282

Publication Date:

January 13, 2011

Filing Date:

March 23, 2010

Export Citation:

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Assignee:

FREESCALE SEMICONDUCTOR INC (US)
BIEN DAVID E (US)
MIJUSKOVIC DEJAN (US)

International Classes:

B81B7/02; B81B7/00; B81C1/00; G01C19/00; G01N27/00; G01P15/08; G01R27/00

Foreign References:

KR100363783B1	2002-12-11
US20080295596A1	2008-12-04
JP2007520716A	2007-07-26
JP2006501483A	2006-01-12

Other References: