Title:
SENSOR SYSTEM AND DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/111098
Kind Code:
A1
Abstract:
The present invention addresses the problem of reducing noise in the sense signal from an FET-type hydrogen sensor. In order to solve this problem, one aspect of the sensor system according to the present invention comprises a reference device and a sensor device, each configured by means of an FET on a substrate, and the well potentials of these devices are electrically isolated from each other.
Inventors:
ONO KAZUO (JP)
USAGAWA TOSHIYUKI (JP)
USAGAWA TOSHIYUKI (JP)
Application Number:
PCT/JP2015/083889
Publication Date:
July 14, 2016
Filing Date:
December 02, 2015
Export Citation:
Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
G01N27/00; G01K7/01; H01L21/336; H01L21/761; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/08; H01L27/088; H01L29/78
Domestic Patent References:
| WO2011055605A1 | 2011-05-12 |
Foreign References:
| JP2013064746A | 2013-04-11 | |||
| JPH0333646A | 1991-02-13 | |||
| JPH0293357A | 1990-04-04 | |||
| JP2012073154A | 2012-04-12 | |||
| JPS63171351A | 1988-07-15 | |||
| US4874499A | 1989-10-17 |
Other References:
KEIJI TSUKADA ET AL.: "Dual-Gate Field-Effect Transistor Hydrogen Gas Sensor with Thermal Compensation", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, 22 February 2010 (2010-02-22), pages 024206, XP001554139
See also references of EP 3244200A4
See also references of EP 3244200A4
Attorney, Agent or Firm:
SEIRYO I. P. C. (JP)
青稜 patent business corporation (JP)
青稜 patent business corporation (JP)
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