Title:
SENSOR
Document Type and Number:
WIPO Patent Application WO/2019/097801
Kind Code:
A1
Abstract:
Provided is a technique for mounting a semiconductor-type gas sensor device on a ceramic substrate which can withstand a high-temperature environment. This sensor in which a sensor device having a gas sensing function and being formed on a semiconductor substrate is mounted and joined onto the ceramic substrate is configured such that a metalized connection part made of Pt is formed in the sensor device, a stress buffer layer is formed between an insulating film of the sensor device and the metalized part, a heater is mounted onto the ceramic substrate, and the sensor device is mounted, onto the ceramic substrate via precious metal bumps, over the heater with a gas detection unit opposed to the heater.
Inventors:
YORITA CHIKO (JP)
USHIFUSA NOBUYUKI (JP)
SASAGO YOSHITAKA (JP)
ISOBE ATSUSHI (JP)
USHIFUSA NOBUYUKI (JP)
SASAGO YOSHITAKA (JP)
ISOBE ATSUSHI (JP)
Application Number:
PCT/JP2018/031524
Publication Date:
May 23, 2019
Filing Date:
August 27, 2018
Export Citation:
Assignee:
HITACHI METALS LTD (JP)
International Classes:
H01L21/58; F01N3/00; G01N5/00; G01N27/00; G01N27/12; G01N29/02; H01L21/60; H01L23/34; H01L25/065; H01L25/07; H01L25/18
Foreign References:
| JP2016156728A | 2016-09-01 | |||
| JPS61138153A | 1986-06-25 | |||
| JP2002098666A | 2002-04-05 | |||
| US20120090381A1 | 2012-04-19 |
Attorney, Agent or Firm:
SEIRYO I.P.C. (JP)
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