Title:
SEPARATION GATE POWER DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/016305
Kind Code:
A1
Abstract:
The present invention relates to the field of power device semiconductors. Disclosed is a manufacturing method for a separation gate power device, comprising the following steps: preparing an epitaxial layer; preparing a trench structure; manufacturing a pressure-resistant layer at the bottom of the trench; preparing source polycrystalline silicon; growing polycrystalline silicon interlayer silicon oxide; preparing gate polycrystalline silicon; performing body region and source region; preparing contact holes and tungsten plugs; etching a circuit; and preparing a passivation layer. Also disclosed is a separation gate power device obtained by the manufacturing method. According to the present invention, the problem of too large line width of a trench gate region is avoided, the integration level can be improved, and the consistency of a threshold voltage between cells can be improved; moreover, the polycrystalline silicon interlayer silicon oxide is formed by oxidation of polycrystalline silicon, the step of high-density plasma deposition process is omitted, and the cost is controllable; the problems of an oxide layer hole and electric leakage caused by plasma bombardment are avoided; and the cell density can be further reduced, the on-resistance is reduced, and the device efficiency is improved.
Inventors:
SHI LIANG (CN)
YANG LI (CN)
YANG LI (CN)
Application Number:
PCT/CN2022/109827
Publication Date:
February 16, 2023
Filing Date:
August 03, 2022
Export Citation:
Assignee:
CHONGQING ALPHA AND OMEGA SEMICONDUCTOR LTD (CN)
International Classes:
H01L21/768; H01L23/528; H01L23/532
Foreign References:
| CN113644028A | 2021-11-12 | |||
| CN105702736A | 2016-06-22 | |||
| CN111276394A | 2020-06-12 | |||
| CN105448741A | 2016-03-30 | |||
| US20110220990A1 | 2011-09-15 |
Attorney, Agent or Firm:
SHANGHAI AI ZHI SHAN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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