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Title:
SiC COMPLEMENTARY TYPE FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2021/256230
Kind Code:
A1
Abstract:
This SiC complementary type field effect transistor has a SiC substrate on which a normally off-type n-channel field effect transistor 1a and p-channel field effect transistor 1b are formed. Al is a p-type impurity with which a channel region of the p-channel field effect transistor is doped. The energy level of an n-type impurity with which a channel region of the n-channel field effect transistor is doped, is separated by not less than 0.13 eV from a conduction band edge.

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Inventors:
KIMOTO TSUNENOBU (JP)
KANEKO MITSUAKI (JP)
NAKAJIMA MASASHI (JP)
Application Number:
PCT/JP2021/020585
Publication Date:
December 23, 2021
Filing Date:
May 31, 2021
Export Citation:
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Assignee:
UNIV KYOTO (JP)
International Classes:
H01L27/06; H01L21/337; H01L21/338; H01L21/8232; H01L27/098; H01L29/808; H01L29/812
Foreign References:
JP2019091873A2019-06-13
JP2017212397A2017-11-30
JP2011166025A2011-08-25
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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