SiC EPITAXIAL GROWTH APPARATUS - NUFLARE TECHNOLOGY INC

Title:

SiC EPITAXIAL GROWTH APPARATUS

Document Type and Number:

WIPO Patent Application WO/2020/213503

Kind Code:

A1

Abstract:

This SiC epitaxial growth apparatus according to an embodiment is provided with: a chamber capable of accommodating a substrate on which a film is formed by a process gas by introducing the process gas containing at least silicon and carbon; a pipe for discharging, from the chamber, a gas containing byproducts that result from the formation of the film on the substrate; and a pressure control valve provided partway along the pipe. The valve has: an inlet into which a gas flows from an upstream section of the pipe communicating the chamber and the valve; and an outlet from which a gas flows to a downstream section of the pipe communicating with the upstream section of the pipe through the valve. At least a portion of the upstream section is positioned lower than the inlet or a portion of the downstream section is positioned lower than the outlet.

Inventors:

MIZUSHIMA ICHIRO (JP)
DAIGO YOSHIAKI (JP)
MORIYAMA YOSHIKAZU (JP)

Application Number:

PCT/JP2020/015890

Publication Date:

October 22, 2020

Filing Date:

April 08, 2020

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NUFLARE TECHNOLOGY INC (JP)

International Classes:

C30B25/14; C23C16/42; C23C16/44; C30B29/36; H01L21/205

Foreign References:

JP2016225411A	2016-12-28
JP2013045799A	2013-03-04
JP2013227648A	2013-11-07
JP2001126999A	2001-05-11
JP2001044185A	2001-02-16
JP2013125810A	2013-06-24
JP2009016635A	2009-01-22
JP2010222148A	2010-10-07

Other References: