Title:
SiC SINGLE CRYSTAL MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2013/065204
Kind Code:
A1
Abstract:
Provided is a SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In this SiC single crystal manufacturing method, a SiC single crystal is grown in a crucible from a Si solution containing C. The SiC single crystal manufacturing method is characterized in alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, said supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.
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Inventors:
KADO MOTOHISA (JP)
DAIKOKU HIRONORI (JP)
KUSUNOKI KAZUHIKO (JP)
DAIKOKU HIRONORI (JP)
KUSUNOKI KAZUHIKO (JP)
Application Number:
PCT/JP2011/078592
Publication Date:
May 10, 2013
Filing Date:
December 09, 2011
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
SUMITOMO METAL IND (JP)
KADO MOTOHISA (JP)
DAIKOKU HIRONORI (JP)
KUSUNOKI KAZUHIKO (JP)
SUMITOMO METAL IND (JP)
KADO MOTOHISA (JP)
DAIKOKU HIRONORI (JP)
KUSUNOKI KAZUHIKO (JP)
International Classes:
C30B29/36; C30B19/04
Foreign References:
| JP2008100854A | 2008-05-01 | |||
| JP2010208926A | 2010-09-24 | |||
| JP2004002173A | 2004-01-08 | |||
| JP2003512282A | 2003-04-02 | |||
| JPH06271388A | 1994-09-27 | |||
| JPH06316483A | 1994-11-15 |
Other References:
See also references of EP 2775015A4
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
Aoki 篤 (JP)
Aoki 篤 (JP)
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Claims: