Title:
SiC WAFER DEFECT MEASURING METHOD, REFERENCE SAMPLE, AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2018/123506
Kind Code:
A1
Abstract:
This SiC wafer defect measuring method has a device management step for managing a defect measuring device by: irradiating a reference sample which is made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface thereof, such irradiation performed with the excitation light, prior to measuring defects of a SiC wafer, and under irradiation conditions identical to those during measuring of the SiC wafer; and measuring the S/N ratio of the pattern from the reflection image of the pattern.
Inventors:
KAMEI KOJI (JP)
Application Number:
PCT/JP2017/044093
Publication Date:
July 05, 2018
Filing Date:
December 07, 2017
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/66; C30B29/36
Foreign References:
| JP2015119056A | 2015-06-25 | |||
| JP2007318031A | 2007-12-06 |
Attorney, Agent or Firm:
OIKAWA Shu et al. (JP)
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