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Title:
SiGe CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2000/030975
Kind Code:
A1
Abstract:
A SiGe crystal material wherein grains constituting the crystal have a size of 5 x 10?-5¿mm?3¿ or more. The SiGe crystal material has an improved performance index as a thermoelectric element and excellent processability, and is free from the occurrence of the deterioration of properties and a crack during the use thereof.

Inventors:
ABE TAKAO (JP)
YONENAGA ICHIRO (JP)
IGARASHI TETSUYA (JP)
Application Number:
PCT/JP1999/006168
Publication Date:
June 02, 2000
Filing Date:
November 05, 1999
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
ABE TAKAO (JP)
YONENAGA ICHIRO (JP)
IGARASHI TETSUYA (JP)
International Classes:
C30B15/00; H01L35/14; C30B29/10; (IPC1-7): C01B33/06; C30B29/10; C30B15/00; H01L35/14
Foreign References:
JPH0624893A1994-02-01
JPH04285096A1992-10-09
Other References:
T. SUMITANI ET AL.: "Evaluation of Single Crystal; Ge(1-x)Six using X-ray Topography (in Japanese)", TRANSACTION OF JAPAN CRYSTAL SOCIETY,, vol. 19, no. 1, 1 July 1992 (1992-07-01), pages 34, XP002932125
K. ISHIGO ET AL.: "Development of Single Crystal; Ge(1-x)-Si(x) (in Japanese)", TRANSACTION OF JAPAN CRYSTAL SOCIETY,, vol. 19, no. 1, 1 July 1992 (1992-07-01), pages 72, XP002932126
ED.: Y. MUTO: "New Chemistry VIII - Semiconductor and Pure Metals (in japanese)", KYORITSU SHUPPAN, 10 August 1963 (1963-08-10), pages 25, XP002932127
See also references of EP 1052222A4
Attorney, Agent or Firm:
Ishihara, Shoji (Higashi-Ikebukuro 3-chome Toshima-ku Tokyo, Higashi-Ikebukuro 3-chome Toshima-ku Tokyo, JP)
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