SIC COMPOSITE SUBSTRATE AND SEMICONDUCTOR DEVICE

Title:

SIC COMPOSITE SUBSTRATE AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2020/184059

Kind Code:

A1

Abstract:

An SiC composite substrate 10 according to the present invention is provided with an SiC single crystal layer 20 and a biaxially oriented SiC layer 30. At least one biaxially oriented SiC layer 30 is arranged on the SiC single crystal 20; and the biaxially oriented SiC layer 30 has SiC oriented both in the c-axis direction and in the a-axis direction, while having a pore 32 and a defect density of 1.0 × 101/cm2 or less.

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Inventors:

MIYAKAZE RISA (JP)
MATSUSHIMA KIYOSHI (JP)
YOSHIKAWA JUN (JP)
WATANABE MORIMICHI (JP)

Application Number:

PCT/JP2020/005741

Publication Date:

September 17, 2020

Filing Date:

February 14, 2020

Export Citation:

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Assignee:

NGK INSULATORS LTD (JP)

International Classes:

C30B29/36; C30B1/02; H01L21/20; H01L33/16

Foreign References:

JP2001158697A	2001-06-12
JP2006036609A	2006-02-09
JP2001158696A	2001-06-12

Attorney, Agent or Firm:

ITEC INTERNATIONAL PATENT FIRM (JP)

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