Title:
SIC EPITAXIAL WAFER, APPARATUS FOR PRODUCING SIC EPITAXIAL WAFER, METHOD FOR PRODUCING SIC EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/186791
Kind Code:
A1
Abstract:
This SiC epitaxial wafer (1) is provided with a substrate (2) and an SiC epitaxial growth layer (3) that is arranged on the substrate (2). The SiC epitaxial growth layer (3) uses an Si compound as an Si supply source and a C compound as a C supply source, and the Si compound and/or the C compound uses a compound containing fluorine (F) as a supply source thereof. In this connection, the Si compound is generally represented by SinHxClyFz (wherein n ≥ 1, x ≥ 0, y ≥ 0, z ≥ 1, and x + y + z = 2n + 2) and the C compound is represented by CmHqClrFs (wherein m ≥ 1, q ≥ 0, r ≥ 0, s ≥ 1 and q + r + s = 2m + 2). Provided are: a high quality SiC epitaxial wafer which has excellent film thickness uniformity and carrier concentration uniformity, while having less surface defects; an apparatus for producing an SiC epitaxial wafer; a method for producing an SiC epitaxial wafer; and a semiconductor device.
Inventors:
TAMURA KENTARO (JP)
Application Number:
PCT/JP2015/066208
Publication Date:
December 10, 2015
Filing Date:
June 04, 2015
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/205; H01L21/28; H01L21/329; H01L21/336; H01L29/12; H01L29/41; H01L29/417; H01L29/423; H01L29/47; H01L29/49; H01L29/78; H01L29/872
Domestic Patent References:
| WO2012144614A1 | 2012-10-26 |
Foreign References:
| JP2002220299A | 2002-08-09 | |||
| JPH06192839A | 1994-07-12 | |||
| JP2013063891A | 2013-04-11 | |||
| US8163086B2 | 2012-04-24 |
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)
Hidekazu Miyoshi (JP)
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