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Patent Searching and Data


Title:
SIC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIFICATION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/043171
Kind Code:
A1
Abstract:
In this SiC epitaxial wafer, a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate that has an off angle and a substrate carbon inclusion density of 0.1-2.5 atoms/cm2. The SiC epitaxial wafer is characterized in that the total density of large pit defects and triangular defects included in the SiC epitaxial layer as a result of substrate carbon inclusion is 0.6 defects/cm2 or less.

Inventors:
GUO Ling (1505 Shimokagemori, Chichibu-sh, Saitama 93, 〒3691893, JP)
KAMEI Koji (1505 Shimokagemori, Chichibu-sh, Saitama 93, 〒3691893, JP)
Application Number:
JP2017/029740
Publication Date:
March 08, 2018
Filing Date:
August 21, 2017
Export Citation:
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Assignee:
SHOWA DENKO K.K. (13-9, Shibadaimon 1-chome Minato-k, Tokyo 18, 〒1058518, JP)
International Classes:
C30B29/36; C23C16/42; C30B25/20; G01N21/956; H01L21/205
Attorney, Agent or Firm:
OIKAWA Shu et al. (1-9-2, Marunouchi Chiyoda-k, Tokyo 20, 〒1006620, JP)
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