Title:
SIC MEMBER AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2020/003721
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a technology for satisfactorily and simply ensuring the outer appearance of a SiC member. The present invention is a SiC member comprising a substrate that has a reference hole penetrating in a front-rear direction, a first SiC coat, and a second SiC coat, wherein: the first SiC coat has a first hole that is continuous with the reference hole in the front-rear direction, a first region that forms the inner circumferential surface of the first hole and extends around the first hole, and a second region that is adjacent to the first region and extends around the first region; the second SiC coat has a second hole that is continuous with the first hole in the front-rear direction, a third region that forms the inner circumferential surface of the second hole and extends around the second hole, and a fourth region that is adjacent to the third region and extends around the third region; the first region includes a crystal structure of crystal growth in a first direction oblique to the front-rear direction; and the second region, third region, and fourth region include a crystal structure of crystal growth in a second direction along the front-rear direction.
Inventors:
CHIDA SHIMPEI (JP)
Application Number:
PCT/JP2019/017416
Publication Date:
January 02, 2020
Filing Date:
April 24, 2019
Export Citation:
Assignee:
ADMAP INC (JP)
International Classes:
H01L21/3065; C23C16/42; C30B29/36
Domestic Patent References:
| WO2008146918A1 | 2008-12-04 |
Foreign References:
| JP2011018894A | 2011-01-27 | |||
| JP2012049220A | 2012-03-08 | |||
| JPH1012563A | 1998-01-16 | |||
| JP2004307253A | 2004-11-04 |
Attorney, Agent or Firm:
MURAKAMI Tomokazu et al. (JP)
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