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Title:
SIC POWER DEVICE-BASED FULL-BRIDGE LLC RESONANT PLASMA POWER SUPPLY
Document Type and Number:
WIPO Patent Application WO/2019/080400
Kind Code:
A1
Abstract:
A SiC power device-based full-bridge LLC resonant plasma power supply, comprising a main circuit and a control circuit. The main circuit comprises a rectification filtering module, a high-frequency full-bridge inverter module, a high-frequency transformer module, and a fast rectification filtering module that are connected in sequence. The rectification filtering module is connected to a three-phase alternating current input power supply. The fast rectification filtering module is connected to a load. The high-frequency full-bridge inverter module employs a full-bridge inverter LLC zero-voltage soft-switching topology. The high-frequency full-bridge inverter module, the high-frequency transformer module, and the fast rectification filtering module are separately connected to a control circuit, so that the control circuit controls power output. The plasma power supply has high efficiency, high power density, and high reliability, can reduce the intensity of electromagnetic interference and implement high-power output, has excellent dynamic response performance, and is benefit to high-speed accurate regulation of a plasma load.

Inventors:
WANG ZHENMIN (CN)
FAN WENYAN (CN)
XIE FANGXIANG (CN)
Application Number:
PCT/CN2018/074687
Publication Date:
May 02, 2019
Filing Date:
January 31, 2018
Export Citation:
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Assignee:
UNIV SOUTH CHINA TECH (CN)
International Classes:
H02M7/217; H02M3/335; H02M7/5387
Foreign References:
CN207368899U2018-05-15
CN206547018U2017-10-10
CN203911762U2014-10-29
CN101391340A2009-03-25
JP2016082747A2016-05-16
Attorney, Agent or Firm:
GUANGZHOU HUAXUE INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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