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Title:
SIC SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/213603
Kind Code:
A1
Abstract:
This SiC semiconductor device includes an SiC chip that has a first main surface on one side and a second main surface on the other side, a first main surface electrode that includes a first Al layer and is formed on the first main surface, a pad electrode that is formed on the first main surface electrode and is connected to a lead, and a second main surface electrode that includes a second Al layer and is formed on the second main surface.

Inventors:
NAGATA TOSHIO (JP)
Application Number:
PCT/JP2020/016433
Publication Date:
October 22, 2020
Filing Date:
April 14, 2020
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/43; H01L21/28; H01L21/60; H01L29/161; H01L29/78; H01L29/861; H01L29/868; H01L29/872
Foreign References:
JP2017118060A2017-06-29
JP2013045973A2013-03-04
JP2018120929A2018-08-02
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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