SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME - Fuji Electric Holdings Co., Ltd.

Title:

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2011/040240

Kind Code:

A1

Abstract:

Disclosed is a method for producing an SiC single crystal, wherein an SiC single crystal, in particular a 4H-SiC single crystal is stably grown at an effective crystal growth rate for a long time even in a low temperature range of 2000˚C or less. Specifically, an SiC single crystal is produced as follows: a staring material containing Si, Ti and Ni is firstly introduced into a crucible (1), which is formed of graphite, so as to form a solvent by being heated and melted therein, and C is dissolved into the solvent from the crucible (1) so as to form a melt (6); and then, an SiC seed crystal substrate (8) is brought into contact with the melt (6) and the melt (6) is converted into a super saturation state of SiC in the vicinity of the surface of the SiC seed crystal substrate (8), so that an SiC single crystal is grown on the SiC seed crystal substrate (8).

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Inventors:

RYO, Mina (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 56, 〒2100856, JP)
呂　民雅 (〒56 神奈川県川崎市川崎区田辺新田１番１号　富士電機ホールディングス株式会社内 Kanagawa, 〒2100856, JP)
YONEZAWA, Yoshiyuki (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 56, 〒2100856, JP)

Application Number:

JP2010/065913

Publication Date:

April 07, 2011

Filing Date:

September 15, 2010

Export Citation:

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Assignee:

Fuji Electric Holdings Co., Ltd. (1-1 Tanabeshinden, Kawasaki-ku Kawasaki-sh, Kanagawa 56, 〒2100856, JP)
富士電機ホールディングス株式会社 (〒56 神奈川県川崎市川崎区田辺新田１番１号 Kanagawa, 〒2100856, JP)
RYO, Mina (1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-sh, Kanagawa 56, 〒2100856, JP)
呂　民雅 (〒56 神奈川県川崎市川崎区田辺新田１番１号　富士電機ホールディングス株式会社内 Kanagawa, 〒2100856, JP)

International Classes:

C30B29/36; C30B19/04

Attorney, Agent or Firm:

OKUYAMA, Shoichi et al. (7th Floor, Akasaka Eight One Building 13-5, Nagata-cho 2-chome, Chiyoda-k, Tokyo 14, 〒1000014, JP)

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