SIC SINGLE CRYSTAL, AND PRODUCTION METHOD THEREFOR

Title:

SIC SINGLE CRYSTAL, AND PRODUCTION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2015/037465

Kind Code:

A1

Abstract:

Provided are: a SiC single crystal with which threading screw dislocation, threading edge dislocation, micropipe defects, basal plane dislocation, and stacking fault density are reduced; and a production method for such a SiC single crystal. In this production method for the SiC single crystal, the SiC single crystal is grown by bringing a SiC seed crystal substrate into contact with a Si-C solution having a temperature gradient in which the temperature thereof reduces from the inside to the surface thereof. The production method for the SiC single crystal includes: a first step in which the SiC single crystal is grown using a (1-100) plane as a growth plane; a second step in which a {0001} plane is exposed from the grown SiC single crystal; and a third step in which the SiC single crystal having the {0001} plane thereof exposed is used as a seed crystal, and the SiC single crystal is grown using the {0001} plane as the growth plane.

Inventors:

DANNO KATSUNORI (JP)

Application Number:

PCT/JP2014/072927

Publication Date:

March 19, 2015

Filing Date:

September 01, 2014

Export Citation:

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Assignee:

TOYOTA MOTOR CO LTD (JP)

International Classes:

C30B29/36; C30B19/12; H01L21/20

Domestic Patent References:

WO2013081164A1	2013-06-06
WO2013157418A1	2013-10-24

Foreign References:

JP2002255693A	2002-09-11
JP2004352590A	2004-12-16
JP2003119097A	2003-04-23
JP2007197231A	2007-08-09
JPH06227886A	1994-08-16
JP2009188117A	2009-08-20
JP2014201466A	2014-10-27
JP2003119097A	2003-04-23
JP2007197231A	2007-08-09
JPH06227886A	1994-08-16

Other References: