Title:
SIC WIDE TRENCH-TYPE JUNCTION BARRIER SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/030583
Kind Code:
A1
Abstract:
According to one aspect of the present invention, provided is a SiC wide trench-type junction barrier Schottky diode comprising: a SiC N- epitaxial layer formed on a SiC N+-type substrate; a Schottky metal layer having a planar Schottky metal pattern layer and a downwardly depressed trench-type Schottky metal pattern layer, which are alternately formed at predetermined intervals and on the upper end part of the SiC N- epitaxial layer; a P+ junction pattern formed so as to permeate from the lower part of the trench-type Schottky metal pattern layer to the SiC N- epitaxial layer; and a cathode electrode formed on the lower part of the SiC N+-type substrate, wherein the width of the P+ junction pattern is narrower than the width of the trench-type Schottky metal pattern layer, and the P+ junction pattern is not formed on a side wall vertical surface region of the trench-type Schottky metal pattern layer.
Inventors:
KYOUNG SIN SU (KR)
KANG TAE YOUNG (KR)
KANG TAE YOUNG (KR)
Application Number:
PCT/KR2016/012165
Publication Date:
February 15, 2018
Filing Date:
October 27, 2016
Export Citation:
Assignee:
POWER CUBESEMI INC (KR)
International Classes:
H01L29/872; H01L21/02; H01L29/06; H01L29/24; H01L29/66; H01L29/861
Foreign References:
| KR20140099879A | 2014-08-13 | |||
| US20020008237A1 | 2002-01-24 | |||
| KR20100122280A | 2010-11-22 | |||
| KR20050048949A | 2005-05-25 | |||
| US20140308799A1 | 2014-10-16 |
Other References:
KYOUNG SIN SU: "Improving electrical Characteristics of 4H-SiC Junction Barrier Schotkey Diode", DOCTORAL THESIS, June 2016 (2016-06-01), pages 39 - 77
Attorney, Agent or Firm:
EZ INTERNATIONAL PATENT & TRADEMARK LAW OFFICE (KR)
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