Title:
SIDE SURFACE LIGHT EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SIDE SURFACE LIGHT EMITTING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/105791
Kind Code:
A1
Abstract:
A side surface light emitting semiconductor element is provided with an AlGaN
layer doped with Mg at a concentration of 5×1019cm-3
or less; a stripe-shaped ridge formed at an upper portion of a laminated structure
including the AlGaN layer and an active layer; and a Schottky barrier formed on
an upper surface of the laminated structure other than the ridge from which the
AlGaN layer is exposed.
Inventors:
NAKAHARA KEN (JP)
Application Number:
PCT/JP2007/055203
Publication Date:
September 20, 2007
Filing Date:
March 15, 2007
Export Citation:
Assignee:
ROHM CO LTD (JP)
NAKAHARA KEN (JP)
NAKAHARA KEN (JP)
International Classes:
H01L33/40; H01L33/06; H01L33/14; H01L33/32; H01S5/042; H01S5/22
Foreign References:
| JPH10163571A | 1998-06-19 | |||
| JP2005340576A | 2005-12-08 | |||
| JP2002261326A | 2002-09-13 |
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (2-8 Toranomon 1-chome, Minato-ku Tokyo 01, JP)
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