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Title:
SILICA FILM AND SEPARATION FILM FILTER
Document Type and Number:
WIPO Patent Application WO/2016/148132
Kind Code:
A1
Abstract:
A silica film filter 10 is provided with a porous substrate 13 and a silica film 18 that is formed on the porous substrate 13 and contains an aryl group. The ratio of the number of Si atoms to the number of C atoms in the silica film 18, according to an elemental analysis performed using energy-dispersive X-ray spectroscopy (EDX), is 0.2 to 15. The thickness of the silica film 18 is preferably 30 nm to 300 nm. If X is the absorption intensity of a Si-O-Si bond in the Fourier transform infrared (FTIR) absorption spectrum, and Y is the absorption intensity based on the aryl group in said spectrum, the ratio X/Y is preferably in the range of 5.0 to 200.

Inventors:
MIURA AYA (JP)
FURUKAWA MASAHIRO (JP)
Application Number:
PCT/JP2016/058109
Publication Date:
September 22, 2016
Filing Date:
March 15, 2016
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
International Classes:
B01D71/02; B01D69/00; B01D69/02; B01D69/10; B01D69/12; C01B33/12
Domestic Patent References:
WO2013129625A12013-09-06
WO2013146622A12013-10-03
Foreign References:
JP2013226541A2013-11-07
JP2013128886A2013-07-04
JP2001212401A2001-08-07
JP2010506698A2010-03-04
JP2009255035A2009-11-05
JPH01304006A1989-12-07
JPH03143535A1991-06-19
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Itec international patent firm (JP)
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