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Title:
SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SILICA GLASS CRUCIBLE, SILICON SINGLE CRYSTAL PULLING DEVICE, INGOT, AND HOMOEPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2017/110763
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a silica glass crucible in which inner residual stress has been accurately measured. The present invention is a silica glass crucible that has been measured by a strain measuring device, the silica glass crucible including: a tubular side wall portion; a curved bottom portion; and a corner portion provided between the side wall portion and the bottom portion, and having a curvature that is greater than the curvature of the bottom portion. The strain measuring device includes: a light emitting unit that is disposed to the side of the side wall portion and emits polarized light toward the side wall portion; an imaging unit that captures video corresponding to the polarized light of an upper end surface of the side wall portion; and an output unit that outputs distribution of strain of the silica glass crucible on the basis of the video captured by the imaging unit.

Inventors:
SATO TADAHIRO (JP)
KITAHARA KEN (JP)
KITAHARA ERIKO (JP)
SUDO TOSHIAKI (JP)
Application Number:
JP2016/087858
Publication Date:
June 29, 2017
Filing Date:
December 20, 2016
Export Citation:
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Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; C03B20/00; C30B15/10
Domestic Patent References:
WO2015099001A12015-07-02
WO2013094318A12013-06-27
WO2011019012A12011-02-17
Foreign References:
JP2004525057A2004-08-19
Attorney, Agent or Firm:
NOMURA ICHIRO (JP)
Ichiro Nomura (JP)
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