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Title:
SILICON-BASED NEGATIVE ELECTRODE MATERIAL, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/236986
Kind Code:
A1
Abstract:
The present invention relates to a silicon-based negative electrode material, a preparation method therefor and an application thereof. The silicon-based negative electrode material comprises: a silicon oxide matrix and carbon atoms, wherein the carbon atoms are uniformly distributed in the silicon oxide matrix at an atomic level; the carbon atoms are bonded to silicon atoms to form disordered C-Si bonds, and an X-ray diffraction energy spectrum (XRD) has no SiC crystallization peak. In an X-ray photoelectron spectroscopy (XPS) of the silicon-based negative electrode material, there is a binding peak belonging to the C-Si bond at a location of 283.5 ± 1 eV after a C1s energy spectrum is subjected to peak splitting. The average particle size D50 of the silicon-based negative electrode material particles is 1 nm-100 μm, and the specific surface area is 0.5 m2/g-40 m2/g. The mass of the carbon atoms accounts for 0.1%-40% of the mass of the silicon oxide matrix. According to the present invention, the ultra-fine silicon obtained by gaseous treatment is bonded to highly conductive carbon to form a disordered C-Si bond structure mixed at a molecular level, thereby facilitating slowing down the volume expansion of the material, improving the conductivity of the interior of the silicon oxide, and improving the rapid charging performance of the material.

Inventors:
LUO FEI (CN)
Application Number:
PCT/CN2021/111681
Publication Date:
November 17, 2022
Filing Date:
August 10, 2021
Export Citation:
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Assignee:
TIANMULAKE EXCELLENT ANODE MAT CO LTD (CN)
International Classes:
H01M10/052; H01M4/48; H01M4/62
Foreign References:
KR20040082803A2004-09-30
CN110474030A2019-11-19
CN202110524212A2021-05-13
CN104022257A2014-09-03
CN110034284A2019-07-19
Attorney, Agent or Firm:
HECHWISE PATENT & TRADEMARK FIRM (CN)
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