Title:
SILICON CARBIDE EPITAXIAL LAYERS GROWN ON SUBSTRATES OFFCUT TOWARDS <1100>
Document Type and Number:
WIPO Patent Application WO2000079570
Kind Code:
A3
Abstract:
A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1100> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
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Inventors:
LANDINI BARBARA E
BRANDES GEORGE R
TISCHLER MICHAEL A
BRANDES GEORGE R
TISCHLER MICHAEL A
Application Number:
PCT/US2000/015155
Publication Date:
June 28, 2001
Filing Date:
June 01, 2000
Export Citation:
Assignee:
ADVANCED TECH MATERIALS (US)
International Classes:
C30B29/36; C30B23/02; C30B25/02; H01L21/04; H01L21/20; H01L21/205; H01L29/04; H01L29/24; (IPC1-7): B32B7/00; B32B9/00; B32B18/00; C01B31/36; C30B25/02
Foreign References:
| US4912064A | 1990-03-27 | |||
| US5011549A | 1991-04-30 |
Other References:
KARMANN S. ET AL.: "Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC", J. APPL. PHYS., vol. 72, no. 11, December 1992 (1992-12-01), pages 5437 - 5442, XP002935766
WANG ET AL.: "Effect of substrate orientation on interfacial and bulk character of chemically vapor deposited monocrystalline silicon carbide thin films", J. AM. CERAM. SOC., vol. 73, no. 5, 1990, pages 1289 - 1296, XP002935765
BURK A.A. JR.: "SiC epitaxial growth on a-axis SiC substrates", INST. PHYS. CONF. SER., vol. 138, no. 137, 1993, pages 29 - 32, XP002935764
KONG H.S. ET AL.: "Chemical vapor depostion and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates", J. APPL. PHYS., vol. 64, no. 5, 1988, pages 2672 - 2679, XP002935763
SI W.: "Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates", J. ELECTRONIC MATL., vol. 26, no. 3, 1997, pages 151 - 159, XP002935762
See also references of EP 1214190A4
WANG ET AL.: "Effect of substrate orientation on interfacial and bulk character of chemically vapor deposited monocrystalline silicon carbide thin films", J. AM. CERAM. SOC., vol. 73, no. 5, 1990, pages 1289 - 1296, XP002935765
BURK A.A. JR.: "SiC epitaxial growth on a-axis SiC substrates", INST. PHYS. CONF. SER., vol. 138, no. 137, 1993, pages 29 - 32, XP002935764
KONG H.S. ET AL.: "Chemical vapor depostion and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates", J. APPL. PHYS., vol. 64, no. 5, 1988, pages 2672 - 2679, XP002935763
SI W.: "Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates", J. ELECTRONIC MATL., vol. 26, no. 3, 1997, pages 151 - 159, XP002935762
See also references of EP 1214190A4
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