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Title:
SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2015/114961
Kind Code:
A1
Abstract:
Provided are: a silicon carbide epitaxial substrate which has good surface properties and in which the background concentration of a nitrogen atom is sufficiently reduced; and a method for producing the silicon carbide epitaxial substrate. The silicon carbide epitaxial substrate (10) is equipped with a base substrate (1) which has face C as the main surface and a silicon carbide epitaxial layer (2) which is arranged on the face C of the base substrate (1). The silicon carbide epitaxial layer (2) contains a layer in which the background concentration of a nitrogen atom is 3 × 1015 cm-3 or less. The production method comprises a step of forming a silicon carbide epitaxial layer (2) on face C of a silicon carbide base substrate (1). In the step of forming the silicon carbide epitaxial layer (2), the ratio (i.e., C/Si) of the number of carbon atoms to the number of silicon atoms in a raw material gas is 1.7 to 2.1 inclusive and the epitaxial growth temperature is 1600 to 1800ºC inclusive.

Inventors:
GENBA JUN (JP)
Application Number:
JP2014/082790
Publication Date:
August 06, 2015
Filing Date:
December 11, 2014
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C23C16/42; C23C16/455; C30B25/16; H01L21/20; H01L21/205
Domestic Patent References:
WO2010024392A12010-03-04
WO2003078702A12003-09-25
Foreign References:
JP2002249376A2002-09-06
JP2013063891A2013-04-11
JP2003318388A2003-11-07
JP2006060195A2006-03-02
Other References:
WADA, K. ET AL.: "Epitaxial growth of 4H-SiC on 4°off-axis (0001) and (000-1) substrates by hot-wall chemical vapor deposition", J, CRYST. GROWTH, vol. 291, no. 2, 1 June 2006 (2006-06-01), pages 370 - 374, XP028016535
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
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