Title:
SILICON CARBIDE EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/043927
Kind Code:
A1
Abstract:
This silicon carbide epitaxial substrate is provided with a single-crystal silicon carbide substrate having a principal surface that has a polytype of 4H and is inclined by an angle θ in an <11-20> orientation from a {0001} plane, and a silicon carbide epitaxial layer 11 of a film thickness t formed on the principal surface. The single-crystal silicon carbide substrate has a diameter of 150 mm or greater. The angle θ is more than 0°, and not more than 6°. Pairs of a pit of a screw dislocation and an oblique line defect present at a location spaced apart by t/tanθ from the pit is present on the surface of the silicon carbide epitaxial layer. The density of pairs of pits and oblique line defects is 0.2/cm2 or less.
Inventors:
HORI TSUTOMU (JP)
MIYASE TAKAYA (JP)
HONKE TSUBASA (JP)
YAMAMOTO HIROFUMI (JP)
OKITA KYOKO (JP)
MIYASE TAKAYA (JP)
HONKE TSUBASA (JP)
YAMAMOTO HIROFUMI (JP)
OKITA KYOKO (JP)
Application Number:
PCT/JP2017/031668
Publication Date:
March 07, 2019
Filing Date:
September 01, 2017
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C30B25/20; H01L21/20; H01L21/205
Domestic Patent References:
| WO2013150587A1 | 2013-10-10 | |||
| WO2015137439A1 | 2015-09-17 | |||
| WO2011074453A1 | 2011-06-23 |
Foreign References:
| JP2017145150A | 2017-08-24 |
Other References:
TSUCHIDA, H. ET AL.: "Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth", JOURNAL OF CRYSTAL GROWTH, vol. 310, 2008, pages 757 - 765, XP022441519, ISSN: 0022-0248
BERECHMAN, R. A. ET AL.: "Trapezoid defect in 4H-SiC epilayers", JOURNAL OF CRYSTAL GROWTH, vol. 338, 2012, pages 16 - 19, XP028350917, ISSN: 0022-0248, DOI: doi:10.1016/j.jcrysgro.2011.10.009
BERECHMAN, R. A. ET AL.: "Trapezoid defect in 4H-SiC epilayers", JOURNAL OF CRYSTAL GROWTH, vol. 338, 2012, pages 16 - 19, XP028350917, ISSN: 0022-0248, DOI: doi:10.1016/j.jcrysgro.2011.10.009
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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