Title:
SILICON CARBIDE EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/255698
Kind Code:
A1
Abstract:
A silicon carbide epitaxial substrate is provided with a silicon carbide substrate, a first silicon carbide epitaxial layer and a second silicon carbide epitaxial layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide epitaxial layer is in contact with the whole area of the first main surface. The second silicon carbide epitaxial layer is in contact with the whole area of the second main surface. The carrier concentration in the silicon carbide substrate is higher than that in each of the first silicon carbide epitaxial layer and the second silicon carbide epitaxial layer.
Inventors:
ENOKIZONO TARO (JP)
HORI TSUTOMU (JP)
NISHIGUCHI TARO (JP)
HORI TSUTOMU (JP)
NISHIGUCHI TARO (JP)
Application Number:
PCT/JP2020/021744
Publication Date:
December 24, 2020
Filing Date:
June 02, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C23C16/42; C30B25/20; H01L21/205
Domestic Patent References:
| WO2016059670A1 | 2016-04-21 |
Foreign References:
| JP2006060195A | 2006-03-02 | |||
| JP2005001899A | 2005-01-06 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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