Title:
SILICON CARBIDE EPITAXIAL WAFER, AND PREPARATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/180433
Kind Code:
A1
Abstract:
According to an embodiment, a method for preparing a silicon carbide epitaxial wafer comprises the steps of: preparing a wafer inside a susceptor; and growing silicon carbide epitaxial layers on the wafer. The step of growing silicon carbide epitaxial layers on the wafer comprises the steps of: injecting fuel into the susceptor; growing silicon carbide epitaxial layers on the wafer at a first growth rate; and growing silicon carbide epitaxial layers on the wafer at a second growth rate higher than the first growth rate. According to an embodiment, a silicon carbide epitaxial wafer comprises: a silicon carbide wafer; and silicon carbide epitaxial layers formed on the silicon carbide wafer, and the surface defect is 1 ea/cm2 or less.
Inventors:
KANG SEOK MIN (KR)
Application Number:
PCT/KR2013/004645
Publication Date:
December 05, 2013
Filing Date:
May 28, 2013
Export Citation:
Assignee:
LG INNOTEK CO LTD (KR)
International Classes:
H01L21/20
Foreign References:
| JP2012051795A | 2012-03-15 | |||
| JP2011225421A | 2011-11-10 | |||
| JP2008004888A | 2008-01-10 | |||
| KR20090017074A | 2009-02-18 | |||
| JP2009256138A | 2009-11-05 |
Attorney, Agent or Firm:
SEO, Kyo Jun (KR)
서교준 (KR)
서교준 (KR)
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