Title:
SILICON CARBIDE HETEROJUNCTION NORMALLY-CLOSED HIGH-ELECTRON-MOBILITY TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/050867
Kind Code:
A1
Abstract:
Provided in the present invention is a preparation method for a silicon carbide (SiC) heterojunction normally-closed high-electron-mobility transistor. The method comprises: selecting an unintentionally doped n-type 4H-SiC wafer as a substrate; homogeneously and epitaxially growing a 4H-SiC transition layer on the surface of the substrate, and epitaxially growing a C face on an upper surface of the 4H-SiC transition layer; growing an unintentionally doped 3C-SiC potential well layer on the C face of the 4H-SiC transition layer; growing an n-type doped 4H-SiC barrier layer on an upper surface of the 3C-SiC potential well layer, and epitaxially growing an Si face on an upper surface of the 4H-SiC barrier layer; growing an unintentionally doped 3C-SiC cap layer on the Si face of the 4H-SiC barrier layer; and manufacturing an electrode and a protective film, so as to obtain a 3C-SiC/4H-SiC heterojunction normally-closed single-channel high-electron-mobility transistor. In the implementation of the present invention, elements on two sides of an SiC heterojunction interface are the same during a preparation process, such that there is no diffusion pollution, and the process complexity is reduced; and the obtained SiC heterojunction normally-closed high-electron-mobility transistor has a low threshold voltage, a very small specific on-resistance, a high breakdown voltage, a large power quality factor and high use reliability.
Inventors:
WEI WENSHENG (CN)
DAI SENRONG (CN)
DING JINGYANG (CN)
WANG ZISHENG (CN)
YANG CHENFEI (CN)
DAI SENRONG (CN)
DING JINGYANG (CN)
WANG ZISHENG (CN)
YANG CHENFEI (CN)
Application Number:
PCT/CN2022/119679
Publication Date:
March 14, 2024
Filing Date:
September 19, 2022
Export Citation:
Assignee:
UNIV WENZHOU (CN)
International Classes:
H01L29/778
Foreign References:
| CN114156341A | 2022-03-08 | |||
| CN105679838A | 2016-06-15 | |||
| US20130256681A1 | 2013-10-03 | |||
| US20180204940A1 | 2018-07-19 | |||
| US20190348532A1 | 2019-11-14 | |||
| US9780181B1 | 2017-10-03 |
Attorney, Agent or Firm:
WENZHOU MINGCHUANG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
Download PDF: