Title:
SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR GROWING SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2013/100456
Kind Code:
A1
Abstract:
A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.
Inventors:
KIM BYUNG SOOK (KR)
KIM BUM SUP (KR)
MIN KYOUNG SEOK (KR)
SHIN DONG GEUN (KR)
HA SEO YONG (KR)
HAN JUNG EUN (KR)
KIM BUM SUP (KR)
MIN KYOUNG SEOK (KR)
SHIN DONG GEUN (KR)
HA SEO YONG (KR)
HAN JUNG EUN (KR)
Application Number:
PCT/KR2012/010962
Publication Date:
July 04, 2013
Filing Date:
December 14, 2012
Export Citation:
Assignee:
LG INNOTEK CO LTD (KR)
International Classes:
C04B35/565; C01B31/36; C04B35/622; C30B29/36
Foreign References:
| JP2000178071A | 2000-06-27 | |||
| KR20110021523A | 2011-03-04 | |||
| KR100848810B1 | 2008-07-28 | |||
| US20090111678A1 | 2009-04-30 |
Attorney, Agent or Firm:
SEO, Kyo Jun (832-41Yeoksam-dong,,Gangnam-gu, Seoul 135-080, KR)
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Claims: