SILICON CARBIDE POWER SEMICONDUCTOR DEVICE HAVING LOW ON-RESISTANCE

WIPO Patent Application WO/2019/114201

A1

A silicon carbide power semiconductor device having low on-resistance, which is an axisymmetric structure and which comprises: an N-type substrate (1), wherein an N-type drift region (2) is provided on the N-type substrate, and a pair of P-type base regions (3) are symmetrically provided in the N-type drift region, a P+ type body contact region (4) and an N+ type source region (5) being provided in the P-type base region; a gate oxide layer (7) is provided on a surface of the N-type drift region, and a polysilicon gate (8) is provided on a surface of the gate oxide layer; an array formed by N-type regions (11) is provided within the P-type base regions, an upper surface being separated from the gate oxide layer; the N-type regions and the P-type base regions are distributed at intervals in the device gate width direction, and the distance from the N-type regions to the gate oxide layer, the thickness, and the doping concentration cause the N-type regions to be exactly pinched off in the natural state. While maintaining the breakdown voltage of the device, the on-resistance of the device is lowered, the on-state current capabilities of the device are improved, and on-state energy loss is reduced.

LIU SIYANG (CN)
SUN WEIFENG (CN)
LI TING (CN)
WEI JIAXING (CN)
LI ZHICHAO (CN)
FANG JIONG (CN)
LU SHENGLI (CN)
SHI LONGXING (CN)

PCT/CN2018/088785

June 20, 2019

May 29, 2018

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UNIV SOUTHEAST (CN)
SOUTHEAST UNIV WUXI INSTITUTE OF INTEGRATED CIRCUIT TECHNOLOGY (CN)

H01L29/78; H01L29/10

CN104600121A	2015-05-06
CN102097479A	2011-06-15
CN103762230A	2014-04-30

NANJING SUGAO PATENT AND TRADEMARK FIRM (ORDINARY PARTNERSHIP) (CN)

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