SILICON CARBIDE POWER SEMICONDUCTOR DEVICE HAVING FOLDED CHANNEL AREA, AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2023/211010

A1

A silicon carbide power semiconductor device having a folded channel area, and a manufacturing method therefor are disclosed. The power semiconductor device comprises a gate protection circuit unit arranged between a source metal and a gate electrode, wherein the gate protection circuit unit comprises: an embedded diode which is formed such that a first conductive ion injection area and a second conductive ion injection area are alternately connected in multiple stages to a polysilicon layer insulated by an insulation film layer formed on the upper side surface of a semiconductor substrate, and which has one side end electrically connected to the source metal and another side end electrically connected to the gate electrode; and one or more floating metal layers for shorting the first conductive ion injection area and the second conductive ion injection area, which are adjacent to each other in the embedded diode.

JP5191893	Semiconductor element and forming method
JPH0818046	SEMICONDUCTOR INTEGRATED CIRCUIT
JP2003077935	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

OH KWANG HOON (KR)
KIM SOO SEONG (KR)
JUNG JIN YOUNG (KR)
YUN CHONG MAN (KR)

PCT/KR2023/004848

November 02, 2023

April 11, 2023

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TRINNO TECH CO LTD (KR)

H01L29/78; H01L29/08; H01L29/73

KR20020000984A	2002-01-09
JP6485382B2	2019-03-20
JP6722698B2	2020-07-15
JP4798119B2	2011-10-19
KR20170043602A	2017-04-21
KR102404463B1	2022-06-07

HAN, Sang Chun (KR)

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