SILICON CARBIDE SEMICONDUCTOR DEVICE FABRICATION METHOD

WIPO Patent Application WO/2013/042327

A1

A silicon carbide semiconductor device fabrication method comprises: forming a drift layer (2) upon a silicon carbide substrate (1); forming a base layer (3) upon either the drift layer (2) or an obverse layer part thereof; forming a source region (4) upon the surface layer part of the base layer (3); forming a trench (6) which passes through the base layer (3) and reaches the drift layer (2); forming a gate electrode (8) within the trench (6) upon a gate insulation film (7); forming a source electrode (9) which is electrically connected to the source region (4) and the base layer (3); and forming a drain electrode (11) upon the rear face side of the substrate (1). The forming of the trench (6) further comprises: carrying out leveling the obverse face of the substrate; and carrying out etching which forms the trench (6) after the leveling.

MIYAHARA SHINICHIRO (JP)
YAMAMOTO TOSHIMASA (JP)
TAKAYA HIDEFUMI (JP)
SUGIMOTO MASAHIRO (JP)
WATANABE YUKIHIKO (JP)
SOEJIMA NARUMASA (JP)
ISHIKAWA TSUYOSHI (JP)

PCT/JP2012/005591

March 28, 2013

September 04, 2012

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DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)
MIYAHARA SHINICHIRO (JP)
YAMAMOTO TOSHIMASA (JP)
TAKAYA HIDEFUMI (JP)
SUGIMOTO MASAHIRO (JP)
WATANABE YUKIHIKO (JP)
SOEJIMA NARUMASA (JP)
ISHIKAWA TSUYOSHI (JP)

H01L29/12; H01L21/336; H01L29/78

JP2008177538A	2008-07-31
JP2009278067A	2009-11-26
JPH10150191A	1998-06-02

KIN, Junhi (JP)
Gold Junki (JP)

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