Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2015/064256
Kind Code:
A1
Abstract:
The purpose of the present invention is, subsequent to forming a SiC epitaxial layer on a SiC underlying substrate, to reduce density of crystal defects of the epitaxial layer surface in order to achieve improvement in the rate of nondefective devices. Provided is a silicon carbide semiconductor device comprising a first-conductivity-type silicon carbide semiconductor epitaxial layer (2) which is stacked on a main surface of a first-conductivity-type silicon carbide semiconductor substrate (1), wherein the silicon carbide semiconductor device is provided with a recrystallized layer (13) on the surface of the silicon carbide semiconductor substrate (1) on which the silicon carbide semiconductor epitaxial layer (2) is stacked, and/or the surface of the silicon carbide semiconductor epitaxial layer (2).
Inventors:
KITAMURA SHOJI (JP)
Application Number:
PCT/JP2014/075628
Publication Date:
May 07, 2015
Filing Date:
September 26, 2014
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/872; H01L21/20; H01L21/265; H01L21/28; H01L21/322; H01L21/329; H01L29/06; H01L29/861; H01L29/868
Foreign References:
| JP2013058601A | 2013-03-28 | |||
| JP2010153464A | 2010-07-08 | |||
| JP2011168453A | 2011-09-01 | |||
| JP2000044398A | 2000-02-15 | |||
| JP2002261041A | 2002-09-13 | |||
| JP2007210861A | 2007-08-23 |
Attorney, Agent or Firm:
MATSUI Shigeru et al. (JP)
Shigeru Matsui (JP)
Shigeru Matsui (JP)
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