Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/059912
Kind Code:
A1
Abstract:
This silicon carbide semiconductor device manufacturing method is provided with: a step for preparing a silicon carbide layer including an n-type region having n-type conductivity, and a p-type region having p-type conductivity; a step for forming, on the n-type region and the p-type region, a material layer containing titanium, aluminum, and silicon; and a step for forming an electrode layer by heating the material layer, said electrode layer being in contact with the n-type region and the p-type region. In the step for forming the material layer, the composition of the material layer is determined such that a point (x, y, z) indicating the composition ratios of titanium, aluminum, and silicon (said x, y, and z being numerical values larger than 0) is included in a first triangular pyramid region having, as apexes, the four points, i.e., the original point (0, 0, 0), the point (1, 2, 2), the point (2, 1, 2), and the point (2, 2, 1).
Inventors:
TANAKA SO (JP)
YAMADA SHUNSUKE (JP)
MATSUI TAKAHIRO (JP)
TAMASO HIDETO (JP)
YAMADA SHUNSUKE (JP)
MATSUI TAKAHIRO (JP)
TAMASO HIDETO (JP)
Application Number:
PCT/JP2015/075317
Publication Date:
April 21, 2016
Filing Date:
September 07, 2015
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/28; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| WO2009013886A1 | 2009-01-29 |
Foreign References:
| JP2014038900A | 2014-02-27 | |||
| JP2011082254A | 2011-04-21 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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