Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/235676
Kind Code:
A1
Abstract:
According to the present invention, configuring a source region (4) with an epitaxial layer reduces a variation in the thickness of a base region (3), and suppresses a variation in a threshold value Vt. Furthermore, a side surface of a gate trench (6) is inclined with respect to a normal direction of a main surface of a substrate (1) outside a cell portion (RC) as compared with a part configured with a base region-contacting epitaxial layer of the source region inside the cell portion. Accordingly, a gate insulation film (7) becomes a thick film part having a large thickness outside the cell portion even when the gate insulation film (7) has a thin film part having a small thickness inside the cell portion.
Inventors:
NOBORIO MASATO (JP)
KATO TAKEHIRO (JP)
YAMASHITA YUSUKE (JP)
KATO TAKEHIRO (JP)
YAMASHITA YUSUKE (JP)
Application Number:
PCT/JP2020/020300
Publication Date:
November 26, 2020
Filing Date:
May 22, 2020
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12
Domestic Patent References:
| WO2012124056A1 | 2012-09-20 |
Foreign References:
| JP2018067650A | 2018-04-26 | |||
| JP2016092257A | 2016-05-23 | |||
| JP2015126086A | 2015-07-06 | |||
| JP2007013074A | 2007-01-18 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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