Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/040966
Kind Code:
A1
Abstract:
In the present invention, a silicon carbide semiconductor device is provided with a silicon carbide substrate (10), gate electrodes (92), and a drain electrode (98). Trenches (TR) are formed on a second principal surface (10a) of the silicon carbide substrate (10). The silicon carbide substrate (10) comprises a first electroconductivity type region (86), body regions (82), source regions (83), and first second electroconductivity type regions (21) that are surrounded by the first electroconductivity type region (86). The trenches (TR) are formed of side wall surfaces (SW) and a bottom section (BT). The impurity concentration of the first second electroconductivity type regions (21) is lower than the impurity concentration of the first electroconductivity type region (86). The first second electroconductivity type regions (21) are provided so as to oppose a region (R) interposed between a first contact point (C1) and a second contact point (C2), and so as to be spaced apart from a first principal surface (10b). Due to this configuration, provided are a silicon carbide semiconductor device and a method of manufacturing a silicon carbide semiconductor device with which it is possible to improve switching properties.
Inventors:
WADA KEIJI (JP)
HIYOSHI TORU (JP)
HIYOSHI TORU (JP)
Application Number:
PCT/JP2014/070329
Publication Date:
March 26, 2015
Filing Date:
August 01, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12; H01L29/417; H01L29/423; H01L29/49
Domestic Patent References:
| WO2013031212A1 | 2013-03-07 |
Foreign References:
| JP2010027680A | 2010-02-04 | |||
| JP2012191229A | 2012-10-04 | |||
| JP2008091853A | 2008-04-17 | |||
| JP2006310621A | 2006-11-09 | |||
| JPH09191109A | 1997-07-22 | |||
| JP2007027193A | 2007-02-01 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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