Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/081935
Kind Code:
A1
Abstract:
This silicon carbide semiconductor device is provided with: a pair of first well regions (30) which are formed in a surface layer part of a silicon carbide drift layer (20) at a distance W1 from each other and have a p-type impurity concentration that is higher than the n-type impurity concentration of the silicon carbide drift layer (20); a pair of second well regions (31) which are formed adjacent to the bottom parts of the first well regions (30) at a distance W2 from each other, said distance W2 being larger than the distance W1 by 0.8 μm or more, and which have a p-type impurity concentration that is higher than the n-type impurity concentration of the silicon carbide drift layer (20), while being from 1.1 times to 4.2 times (inclusive) the size of the first well regions (30); and a high concentration JFET region (22) which is formed between the pair of first well regions (30) and between the pair of second well regions (31) and has an n-type impurity concentration that is higher than the n-type impurity concentration of the silicon carbide drift layer (20) but lower than the p-type impurity concentration of the second well region (31). This silicon carbide semiconductor device is able to reduce the leakage current, while suppressing increase of the on-voltage.
Inventors:
TOMINAGA TAKAAKI (JP)
HINO SHIRO (JP)
HINO SHIRO (JP)
Application Number:
PCT/JP2016/076920
Publication Date:
May 18, 2017
Filing Date:
September 13, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12
Domestic Patent References:
| WO2014083771A1 | 2014-06-05 |
Foreign References:
| JP2015115373A | 2015-06-22 |
Attorney, Agent or Firm:
INABA, Tadahiko et al. (JP)
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